Robert H Dennard

Robert Dennard (born September 5, 1932) is an American electrical engineer and inventor.

Contents

• Robert H Dennard 2007 Laureate of the Franklin Institute in Electrical Engineering
• Robert H Dennard 2005 Lemelson MIT Lifetime Achievement Award Winner
• Awards and honors
• References

Dennard was born in Terrell, Texas, U.S.. He received his B.S. and M.S. degrees in Electrical Engineering from Southern Methodist University, Dallas, in 1954 and 1956, respectively. He earned a Ph.D. from Carnegie Institute of Technology in Pittsburgh, Pennsylvania, in 1958. His professional career was spent as a researcher for International Business Machines.

In 1966 he invented dynamic random-access memory (DRAM), for which a patent was issued in 1968. Dennard was also among the first to recognize the tremendous potential of downsizing MOSFETs. The scaling theory he and his colleagues formulated in 1974 postulated that MOSFETs continue to function as voltage-controlled switches while all key figures of merit such as layout density, operating speed, and energy efficiency improve – provided geometric dimensions, voltages, and doping concentrations are consistently scaled to maintain the same electric field. This property underlies the achievement of Moore's Law and the evolution of microelectronics over the last few decades.

Awards and honors

Kyoto Prize (2013)

Carnegie Mellon University Honorary Doctor of Science and Technology (2010)

IEEE Medal of Honor (2009)

IEEE Edison Medal (2001)

Benjamin Franklin Medal in Electrical Engineering from The Franklin Institute (2007)

U.S. National Academy of Engineering (NAE) Charles Stark Draper Prize (2009)

Southern Methodist University Honorary Doctor of Science (1997)

Harvey Prize from Technion Institute in Haifa / Israel (1990)

Industrial Research Institute (IRI) Achievement Award (1989)

U.S. National Medal of Technology (1988)

IEEE Cledo Brunetti Award (1982)

appointed IBM Fellow (1979)