Abdulaziz Karimov (Russian: Каримов Абдулазиз Вахитович) (born January 11, 1944) is a Uzbek researcher in the field of semiconductors. He is the author of more than 40 patents and inventions in the field of semiconductor optoelectronics.
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Biography
Abdulaziz Karimov Vakhitovich was born in Tashkent, Uzbekistan. From 1952 - to 1962, he studied at school no.90 named after Maxim Gorky in Tashkent. He then graduated from the Tashkent Institute of Education, Faculty of Mathematics and Physics, a principal research institute of the Academy of Sciences of Uzbekistan with a degree of Doctor of physical and mathematical sciences.
Scientific work
His scientific work is the study of physical phenomena and processes in the epitaxial multilayer structures and the development of their physical foundations, including the creation of a new class of semiconductor device. He has published more than 450 scientific articles, two monographic collections (one monograph and one textbook), and is the author of more than 40 inventions. Under his leadership, the physical basis of technologies have been developed, as well as the original design of multi-barrier photodiode structures with internal photoelectric amplifications. These Multi-Barrier structures have been improved from year to year with new designs having advanced features. He also discovered that double-barrier rAlGaInAs-n GaAs-Au-injection structures and field effects are the basis of injection-field photodiodes with an operating voltage spectral range of A
His research results have been published in the journals, Electronics, Instruments and experimental technologies, Semiconductors, Technical Physics Letters, Radioelectronics and communicatios systems, Journal of Semiconductor Physics Quantum Electronics Optoelectronics, Journal of Engineering Physics),
Noteworthy results of the study of the spectral characteristics of the double-barrier structure with a corrugated surface of the photodetector as well as sensitive to the impurity region of the spectrum (A.V. Karimov, Yodgorova D.M., Giyasova F.A., Azimov T.M., U.M. Buzrukov, Yakubov A.A.).
Features photovoltaic characteristics fotoelektropreobrazovatelnyh structures. (Technology and design of electronic equipment. 2007. number 4, s.23-28). In comparison with the classical single-barrier photodiode, he obtained high values of photosensitivity from 5 to 15 A / W, which is one - one and a half orders of magnitude higher than (0.5-1 A / W) in the known analogues.
He takes an active part in international conferences, and gave lectures in Prague, 13–17 October 2002, Berlin, 23–25 June 2003, Paris, 7–11 June 2004, Kiev and Odessa 2004-2007 at international conferences physical processes in phototransformator, photodiodes, phototransistors, and the problems of the physical processes in the pn-junctions. He was a member of the organizing committee of the conference held in Baku and Odessa (2004-2007 biennium) on Information and electronic technologies.
Karimov has held international grants UZB-31 "Development of the solar energy photoconverters based on new structures:" ion-beam modified and diamond-like layers-multicrystalline silicon "" 01.04.2000-31.06.2002 years and UZB-. 56 (J) "Development and investigation of the microrelief photoconverters with InGaAs / GaAs and AlGaAs / GaAs heteroepitaxial junctions" 01.10.2002 - 31.12.2004 years.
Currently Karimov with his students working on problems of creating a new generation of photodetector structures for receiving and processing information, He is listed in the Biographical Collection 10th Anniversary Edition of Who's Who in Science and Engineering Scheduled for publication in December 2007.