Combustion chemical vapor deposition (CCVD) is a chemical process by which thin film coatings are deposited onto substrates in the open atmosphere.
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History
In the 1980s, initial attempts were performed to improve the adhesion of metal-plastic composites in dental ceramics using flame-pyrolytically deposited silicon dioxide (SiO2). The silicoater process derived from these studies provided a starting point in the development of CCVD processes. Subsequently, this process was constantly developed and new applications for flame-pyrolytically deposited SiO2 layers where found. At this time, the name "Pyrosil" was coined for these layers. Newer and ongoing studies deal with deposition of other materials (vide infra).
Principles and procedure
In the CCVD process, a precursor compound, usually a metal-organic compound or a metal salt, is added to the burning gas. The flame is moved closely above the surface to be coated. The high energy within the flame converts the precursors into highly reactive intermediates, which readily react with the substrate, forming a firmly adhering deposit. The microstructure and thickness of the deposited layer can be controlled by varying process parameters such as speed of substrate or flame, number of passes, substrate temperature and distance between flame and substrate. CCVD can produce coatings with orientation from preferred to epitaxial, and can produce conformal layers less than 10 nm thick. Thus, CCVD technique is a true vapor deposition process for making thin film coatings . The CCVD coating process has the ability to deposit thin films in the open atmosphere using inexpensive precursor chemicals in solution leading to continuous, production-line manufacturing. It does not require post-deposition treatment e.g., annealing. The throughput potential is high.
Remote combustion chemical vapor deposition (r-CCVD)
The so-called remote combustion chemical vapour deposition is a new variant of the classical CCVD process. It likewise uses flames to deposit thin films, however, this method is based on other chemical reaction mechanisms and offers further abilities for deposition of layer systems which are not practicable by means of CCVD, e.g. titanium dioxide.