Name B. Baliga | Role Electrical engineer | |
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Books Advanced Power MOSFET, Power semiconductor devices, Silicon carbide power de, Advanced Power Rectifier, Advanced High Voltage P | ||
2012 award winner for science dr b jayant baliga
B. Jayant Baliga (born (1948-04-28)28 April 1948 in Chennai) is an Indian electrical engineer best known for his work in power semiconductor devices, and particularly the invention of the insulated gate bipolar transistor.
Contents
- 2012 award winner for science dr b jayant baliga
- 2016 NIHF Inductee Bantval Jayant Baliga
- Career
- Recognition
- References
2016 NIHF Inductee - Bantval Jayant Baliga
Career
Baliga grew up in Jalahalli, a small village near Bangalore, India. His father, Bantwal Vittal Manjunath Baliga, was one of India's first electrical engineers in the days before independence and founding President of the Indian branch of the Institute of Radio Engineers, which later became the IEEE in India. Baliga's father played pivotal roles in the founding of Indian television and electronics industries.
Jayant received his B.Tech in Electrical Engineering from the Indian Institute of Technology, Madras, in 1969, and his MS (1971) and PhD (1974) in Electrical Engineering from the Rensselaer Polytechnic Institute.
He worked 15 years at the General Electric Research and Development Center in Schenectady, New York, then joined North Carolina State University in 1988 as a Full Professor. He was promoted to Distinguished University Professor in 1997. His invention insulated gate bipolar transistor that combines sciences from two streams Electronics engineering and Electrical engineering. This has resulted in cost savings of over $15 trillion for consumers, and is forming a basis for smart grid. Baliga then worked in academic field. He also founded three companies that made products based on semiconductor technologies.
Recognition
