Formula TaN Molar mass 194.95 g/mol Appearance black crystals | Density 13.7 g/cm³ Melting point 3,090 °C | |
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Tantalum nitride (TaN) is an inorganic chemical compound. It is sometimes used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.
References
Tantalum nitride Wikipedia(Text) CC BY-SA