T RAM

Thyristor RAM (T-RAM) is a new (2009) type of random-access memory invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high density and high speed. This technology, which exploits the electrical property known as negative differential resistance and is called thin capacitively-coupled thyristor, is used to create memory cells capable of very high packing densities. Due to this, the memory is highly scalable, and already has a storage density that is several times higher than found in conventional six-transistor SRAM memory. It was expected that the next generation of T-RAM memory will have the same density as DRAM.