Indium arsenide antimonide phosphide (InAsSbP) is a semiconductor material.
InAsSbP has been widely used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes, photodetectors and thermophotovoltaic cells.
InAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials. The vibrational properties of the alloy have been investigated by Raman spectroscopy.
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Indium arsenide antimonide phosphide Wikipedia(Text) CC BY-SA